Abstract

A method for fabricating low defective non-planar bipolar heterostructure transistors includes a steps of providing a substrate that is coated with a first dielectric layer when the substrate is not composed of a dielectric material. A layer of a first semiconductor material is formed by template liquid phase (TLP) crystal growth wherein a second dielectric layer is disposed over the first semiconductor material. A trench is patterned into the second dielectric layer. An intermediate heterostructure is formed by epitaxially growing second semiconductor material in the trench to form a fin structure therein. Various power transistor structures can be formed from the intermediate heterostructure.

Date

September 12, 2024

Authors

AP Jacob, RR Kapadia

Inventors

Ajey Poovannummoottil Jacob, Rehan Rashid Kapadia

Patent_office

US

Application_number

18579330