Abstract

An electro-optic random-access memory enables (1) ultra-fast write and read operation (2) featuring differential sensing (3) wavelength, and polarization multiplex high bandwidth memory access (4) enables very large-scale memory array for wafer scale ICs.

Date

May 23, 2024

Authors

AP Jacob, AR Jaiswal, R Kudalippalliyalil, S Chandran

Inventors

Ajey Poovannummoottil Jacob, Akhilesh Ramlaut Jaiswal, Ramesh Kudalippalliyalil, Sujith Chandran

Patent_office

US

Application_number

18281662