Abstract

Methods for forming a NW with multiple devices having alternate channel materials and resulting devices are dis closed. Embodiments include forming a first stack of semi conductor layers including a first doped Si layer, a first channel layer, and a second doped Si layer, respectively, on a Si substrate; forming a second stack including a first doped

Date

November 28, 2017

Authors

AP Jacob

Inventors

Ajey P Jacob

Patent_office

US

Patent_number

9831131

Application_number

15279732