Abstract

(57) ABSTRACT A method includes forming at least one fin on a semiconduc tor substrate. A silicon alloy material is formed on the finand on exposed Surface portions of the Substrate. A thermal pro cess is performed to define a silicon alloy fin from the silicon alloy material and the fin and to define silicon alloy surface portions from the silicon alloy material and the exposed Sur face portions of the Substrate. A semiconductor device includes a substrate, a fin defined on the substrate, the fin comprising a silicon alloy and having a substantially vertical sidewall, and silicon alloy surface portions on the Substrate adjacent the fin.

Date

August 2, 2016

Authors

AP Jacob, JA Fronheiser, MK Akarvardar, S Bentley

Inventors

Ajey Poovannummoottil Jacob, Jody A Fronheiser, Murat Kerem Akarvardar, Steven Bentley

Patent_office

US

Patent_number

9406803

Application_number

14676239