Abstract

Semiconductor devices including a finand method of forming the semiconductor devices are provided herein. In an embodi ment, a method of forming a semiconductor device includes forming a fin overlying a semiconductor Substrate. The finis formed by epitaxially-growing a semiconductor material over the semiconductor Substrate, and the fin has a first portion that is proximal to the semiconductor Substrate and a second por Publication Classification tion that is spaced from the semiconductor substrate by the first portion. A gate structure is formed over the fin and the Int. C. semiconductor substrate. The first portion of the fin is etched HOIL 21/02(2006.01) to form a gap between the second portion and the semicon HOIL 29/66(2006.01) ductor substrate.

Date

November 12, 2015

Authors

S Bentley, AP Jacob

Inventors

Steven Bentley, Ajey P Jacob

Patent_office

US

Application_number

14274406