Abstract

BACKGROUND
Transistors such as metal oxide semiconductor field effect transistors (MOSFETs) or simply field effect transistors (FETs) are the core building blocks of the vast majority of semiconductor integrated circuits (ICs). A FET includes Source and drain regions between which a current can flow through a channel under the influence of a bias applied to a gate electrode that overlies the channel. Some semiconductor ICs, such as high performance microprocessors, can include hundreds of millions of FETs. For such ICs, decreasing tran sistor size and thus increasing transistor density has tradition ally been a high priority in the semiconductor manufacturing industry. Transistor performance, however, must be main tained even as the transistor size decreases.

Date

March 24, 2015

Authors

MK Akarvardar, X Cai, AP Jacob

Inventors

Murat Kerem Akarvardar, Xiuyu Cai, Ajey Poovannummoottil Jacob

Patent_office

US

Patent_number

8987094

Application_number

13937939