Abstract

Methods of forming spin torque microelectronic devices are described. Those methods may include forming a free FM layer on a Substrate, forming a non-magnetic layer on the free FM layer, forming at least three input pillars on the non magnetic layer, and forming an output pillar on the non magnetic layer to form a majority gate device.

Date

May 28, 2013

Authors

DE Nikonov, GI Bourianoff, AP Jacob

Inventors

Dmitri E Nikonov, George I Bourianoff, Ajey P Jacob

Patent_office

US

Patent_number

8450818

Application_number

12456581